Invention Grant
- Patent Title: Electrostatic discharge protection circuit and semiconductor circuit device
- Patent Title (中): 静电放电保护电路和半导体电路装置
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Application No.: US14134239Application Date: 2013-12-19
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Publication No.: US09124088B2Publication Date: 2015-09-01
- Inventor: Masuhide Ikeda
- Applicant: SEIKO EPSON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SEIKO EPSON CORPORATION
- Current Assignee: SEIKO EPSON CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2013-000359 20130107
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H9/04 ; H01C7/12 ; H02H1/00 ; H02H1/04 ; H02H3/22

Abstract:
The invention provides an electrostatic protection circuit that is effective in absorbing static electricity that is continuously input. The electrostatic protection circuit includes a circuit constituting a latch and a static electricity absorption circuit. When static electricity is input, the static electricity absorption circuit maintains its on state for a while at an output held by the latch circuit, and absorbs static electricity that is continuously input. When the static electricity has been absorbed, the output of the latch is inverted so as to turn off the static electricity absorption circuit, and the operation of absorbing static electricity ends. At this point in time, normal operation serving as an input terminal is performed.
Public/Granted literature
- US20140192445A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR CIRCUIT DEVICE Public/Granted day:2014-07-10
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