Invention Grant
US09124218B2 Input impedance of low noise preamplifiers used for MRI with dual source FET, floating ground and permanent ground
有权
用于具有双源FET，浮地和永久接地的MRI的低噪声前置放大器的输入阻抗
- Patent Title: Input impedance of low noise preamplifiers used for MRI with dual source FET, floating ground and permanent ground
- Patent Title (中): 用于具有双源FET，浮地和永久接地的MRI的低噪声前置放大器的输入阻抗
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Application No.: US13375490Application Date: 2010-05-17
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Publication No.: US09124218B2Publication Date: 2015-09-01
- Inventor: Arne Reykowski
- Applicant: Arne Reykowski
- Applicant Address: NL Eindhoven
- Assignee: Koninklijke Philips N.V.
- Current Assignee: Koninklijke Philips N.V.
- Current Assignee Address: NL Eindhoven
- International Application: PCT/IB2010/052178 WO 20100517
- International Announcement: WO2010/146486 WO 20101223
- Main IPC: H03F1/10
- IPC: H03F1/10 ; H03F3/193 ; H03F1/08
Abstract:
A preamplifier (46) comprises a field effect transistor (64) in common source configuration. While the gate of the field effect transistor is coupled to an amplifier input circuit (e.g. MRI coil), the drain of the field effect transistor (64) is coupled to an amplifier output. The preamplifier comprises furthermore a first (66) and a second (68) source-ground connection. The first source-ground lead (66) couples the source of the field effect transistor to the ground node of the amplifier input circuit, while the second source-ground lead (68) couples the source of the field effect transistor to the ground node of the amplifier output circuit. As a result, amplifier output currents generate basically a voltage drop across the second source-ground lead (68). Thus, the amplifier input circuit is less influenced by any common voltage drop across any common source-ground connection.
Public/Granted literature
- US20120062233A1 INPUT IMPEDANCE OF LOW NOISE PREAMPLIFIERS USED FOR MRI Public/Granted day:2012-03-15
Information query
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