Invention Grant
US09124221B2 Wide bandwidth radio frequency amplier having dual gate transistors
有权
具有双栅极晶体管的宽带宽射频放大器
- Patent Title: Wide bandwidth radio frequency amplier having dual gate transistors
- Patent Title (中): 具有双栅极晶体管的宽带宽射频放大器
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Application No.: US13942998Application Date: 2013-07-16
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Publication No.: US09124221B2Publication Date: 2015-09-01
- Inventor: Ramakrishna Vetury , Jeffrey Blanton Shealy
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03F3/193
- IPC: H03F3/193 ; H03F1/22 ; H03F3/26
Abstract:
A wide bandwidth radio frequency amplifier is disclosed. The wide bandwidth radio frequency amplifier has a first signal path having a first input and a first output along with a first dual gate field effect transistor having a first-first gate coupled to the first input and a first drain coupled to the first output. The wide bandwidth radio frequency amplifier also includes a second signal path having a second input and a second output and a second dual gate field effect transistor having a second-first gate coupled to the second input and a second drain coupled to the second output.
Public/Granted literature
- US20140015609A1 WIDE BANDWIDTH RADIO FREQUENCY AMPLIER HAVING DUAL GATE TRANSISTORS Public/Granted day:2014-01-16
Information query
IPC分类:
