Invention Grant
- Patent Title: Error correction coding in non-volatile memory
- Patent Title (中): 非易失性存储器中的纠错编码
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Application No.: US13781321Application Date: 2013-02-28
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Publication No.: US09124300B2Publication Date: 2015-09-01
- Inventor: Eran Sharon , Idan Alrod
- Applicant: SANDISK TECHNOLOGIES INC.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee Address: US TX Plano
- Agency: Toler Law Group, PC
- Main IPC: H03M13/00
- IPC: H03M13/00 ; H03M13/29 ; G06F11/10 ; H03M13/25 ; H03M13/11

Abstract:
A method includes encoding data bits into codewords according to a first error correction encoding scheme. The method includes storing the codewords into a memory and generating a combined codeword by encoding, at the memory, the codewords according to a second error correction encoding scheme to generate parity bits of the combined codeword. The method includes, after storing the codewords into the memory, storing the parity bits of the combined codeword into the memory.
Public/Granted literature
- US20140245098A1 ERROR CORRECTION CODING IN NON-VOLATILE MEMORY Public/Granted day:2014-08-28
Information query
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