Invention Grant
- Patent Title: Semiconductor device and method of manufacturing thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13828142Application Date: 2013-03-14
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Publication No.: US09125308B2Publication Date: 2015-09-01
- Inventor: Taichi Obara , Rei Yoneyama , Hiroyuki Okabe
- Applicant: Taichi Obara , Rei Yoneyama , Hiroyuki Okabe
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2012-101297 20120426
- Main IPC: H05K1/00
- IPC: H05K1/00 ; H05K1/02 ; H05K3/36
Abstract:
A semiconductor device includes a first printed circuit board, a flat cable having electrical wires and a coating film which covers the electrical wires except for both ends, one end of each of the electrical wires is connected to the first printed circuit board, and a second printed circuit board connected to other end of each of the electrical wires. The flat cable is bent in such a manner that the first printed circuit board and the second printed circuit board face each other. A flat surface is formed in a portion of the coating film.
Public/Granted literature
- US20130286622A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2013-10-31
Information query
