Invention Grant
- Patent Title: Insulation pattern-forming method and insulation pattern-forming material
- Patent Title (中): 绝缘图案形成方法和绝缘图案形成材料
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Application No.: US13685744Application Date: 2012-11-27
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Publication No.: US09126231B2Publication Date: 2015-09-08
- Inventor: Satoshi Dei , Hayato Namai , Kyoyu Yasuda , Koichi Hasegawa
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-123392 20100528
- Main IPC: G03F7/00
- IPC: G03F7/00 ; B05D1/32 ; G03F7/09 ; H01L21/311 ; H01L21/033 ; H01L21/768 ; C09D183/06 ; G03F7/039 ; G03F7/38 ; G03F7/40

Abstract:
An insulation pattern-forming method includes forming an organic pattern on a substrate. A space defined by the organic pattern is filled with an insulating material. The organic pattern is removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. An insulation pattern-forming method includes forming a first organic pattern on the substrate. A space defined by the first organic pattern is filled with an insulating material. An upper surface of the first organic pattern is exposed. A second organic pattern that comes in contact with the upper surface of the first organic pattern is formed. A space defined by the second organic pattern is filled with the insulating material. The first organic pattern and the second organic pattern are removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured.
Public/Granted literature
- US20130084394A1 INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL Public/Granted day:2013-04-04
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