Invention Grant
US09126766B2 Manufacturing method of semiconductor device, and semiconductor device
有权
半导体器件的制造方法以及半导体器件
- Patent Title: Manufacturing method of semiconductor device, and semiconductor device
- Patent Title (中): 半导体器件的制造方法以及半导体器件
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Application No.: US14264166Application Date: 2014-04-29
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Publication No.: US09126766B2Publication Date: 2015-09-08
- Inventor: Takayuki Nosaka
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2013-099894 20130510
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B65G35/00 ; H01L21/768 ; H01L21/67 ; H01L21/677
Abstract:
Provided is a semiconductor device that suppresses the occurrence of defects due to photocorrosion. A method for manufacturing the semiconductor device includes the steps of: forming an insulating layer with a concave portion over a substrate; forming a conductive film over the insulating film and the inside of the concave portion; polishing and removing the conductive film positioned over the insulating layer; and cleaning the insulating layer in a light-shielded state. Between the step of polishing and the step of cleaning, or after the step of cleaning, the substrate SUB is moved by detecting the presence or absence of the substrate SUB in the light-shielded state using an infrared sensor.
Public/Granted literature
- US20140335632A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Public/Granted day:2014-11-13
Information query
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