The micro-electromechanical semiconductor component is provided with a first silicon semiconductor substrate having an upper face, into which a cavity delimited by side walls and a floor wall is introduced, and having a second silicon semiconductor substrate comprising a silicon oxide layer and a polysilicon layer applied thereon having a defined thickness. The polysilicon layer of the second silicon semiconductor substrate faces the upper side of the first silicon semiconductor substrate, the two silicon semiconductor substrates are bonded, and the second silicon semiconductor substrate covers the cavity in the first silicon semiconductor substrate. Grooves that extend up to the polysilicon layer are arranged in the second silicon semiconductor substrate in the region of the section thereof that covers the cavity.