Invention Grant
US09126829B2 Graphene valley singlet-triplet qubit device and the method of the same
有权
石墨烯单峰 - 三重态量子位设备及其方法相同
- Patent Title: Graphene valley singlet-triplet qubit device and the method of the same
- Patent Title (中): 石墨烯单峰 - 三重态量子位设备及其方法相同
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Application No.: US13350135Application Date: 2012-01-13
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Publication No.: US09126829B2Publication Date: 2015-09-08
- Inventor: Yu-Shu Wu
- Applicant: Yu-Shu Wu
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: Huntington IP Consulting Co., Ltd.
- Agent Chih Feng Yeh
- Priority: TW100131783A 20110902
- Main IPC: H01L29/06
- IPC: H01L29/06 ; B82Y10/00 ; H01L29/66 ; H01L29/16
Abstract:
The present invention is to provide a graphene valley singlet-triplet qubit device. The device includes a substrate, and a graphene layer formed on the substrate. An energy gap is created between the valence band and the conduction band of the graphene layer. At least one electrical gate is configured on the graphene layer and/or on two sides of the graphene layer. The graphene layer is located in a magnetic field and a voltage is applied to at least one electrical gate, thereby creating a valley singlet-triplet qubit.
Public/Granted literature
- US20130057333A1 GRAPHENE VALLEY SINGLET-TRIPLET QUBIT DEVICE AND THE METHOD OF THE SAME Public/Granted day:2013-03-07
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