Invention Grant
- Patent Title: Sputtering target material
- Patent Title (中): 溅射靶材
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Application No.: US13305963Application Date: 2011-11-29
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Publication No.: US09127346B2Publication Date: 2015-09-08
- Inventor: Koichi Hasegawa , Nobuo Ishii
- Applicant: Koichi Hasegawa , Nobuo Ishii
- Applicant Address: JP Tokyo
- Assignee: ISHIFUKU METAL INDUSTRY CO., LTD.
- Current Assignee: ISHIFUKU METAL INDUSTRY CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2003-356769 20031016
- Main IPC: C22C5/08
- IPC: C22C5/08 ; C23C14/14 ; C22C5/06 ; C23C14/20 ; C23C14/34 ; G11B7/258 ; G11B7/259 ; G11B7/2595 ; G11B7/26
Abstract:
This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.
Public/Granted literature
- US20120070332A1 SPUTTERING TARGET MATERIAL Public/Granted day:2012-03-22
Information query
