Invention Grant
- Patent Title: Cylindrical sputtering target, and method for manufacturing same
- Patent Title (中): 圆柱形溅射靶,及其制造方法
-
Application No.: US13120863Application Date: 2009-09-18
-
Publication No.: US09127352B2Publication Date: 2015-09-08
- Inventor: Kenichi Itoh , Kimiaki Tamano , Shigehisa Todoko , Tetsuo Shibutami
- Applicant: Kenichi Itoh , Kimiaki Tamano , Shigehisa Todoko , Tetsuo Shibutami
- Applicant Address: JP Yamaguchi
- Assignee: TOSOH CORPORATION
- Current Assignee: TOSOH CORPORATION
- Current Assignee Address: JP Yamaguchi
- Agency: Sughrue Mion, PLLC
- Priority: JPP2008-245956 20080925
- International Application: PCT/JP2009/066399 WO 20090918
- International Announcement: WO2010/035718 WO 20100401
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01J37/34

Abstract:
Provided is a cylindrical sputtering target which attains a high production yield in a film-forming process even when a film is formed by sputtering with a long cylindrical sputtering target constituted by a plurality of cylindrical target materials.A multi-divided cylindrical sputtering target formed by bonding a cylindrical base and a plurality of cylindrical target materials together with a bonding material has a divided portion where adjacent cylindrical target materials are arranged with a gap therebetween, while outer peripheral faces of the adjacent cylindrical target materials have a step of 0.5 mm or less therebetween in the divided portion. Such a target is obtained by fixing the cylindrical target materials with reference to the outer peripheral faces of the cylindrical target materials when arranging the cylindrical target materials with reference to the cylindrical base.
Public/Granted literature
- US20110240467A1 CYLINDRICAL SPUTTERING TARGET, AND METHOD FOR MANUFACTURING SAME Public/Granted day:2011-10-06
Information query
IPC分类: