Invention Grant
- Patent Title: Generating a homogeneous magnetic field while pulling a single crystal from molten semiconductor material
- Patent Title (中): 在从熔融的半导体材料中拉出单晶时产生均匀的磁场
-
Application No.: US13590413Application Date: 2012-08-21
-
Publication No.: US09127377B2Publication Date: 2015-09-08
- Inventor: Wolfgang Walter , Cristian Boffo , Philipp Revilak
- Applicant: Wolfgang Walter , Cristian Boffo , Philipp Revilak
- Applicant Address: DE Wuerzburg
- Assignee: Babcock Noell GmbH
- Current Assignee: Babcock Noell GmbH
- Current Assignee Address: DE Wuerzburg
- Agency: Imperium Patent Works
- Agent Darien K. Wallace
- Main IPC: C30B15/22
- IPC: C30B15/22 ; C30B30/04 ; H01F38/00 ; C30B15/30 ; H01F6/04 ; H01F6/06 ; C30B29/06 ; C30B29/08 ; C30B29/42

Abstract:
A single-crystal pulling device includes vertically tilted magnetic coils between the walls of a cooling vessel. The inside and outside walls of the cooling vessel are coaxially aligned about a central axis. The inside wall of the cooling vessel is coaxially disposed around a cylindrical crucible that holds molten semiconductor material. A mid line passes through the middle point of a first coil, the central axis and the middle point of a second coil. The first coil is wound in a first plane, and the second coil is wound in a second plane. The first plane and the second plane both intersect the central axis at the same point. The first plane intersects the central axis at an angle between 5 and 15 degrees. In one embodiment, the first plane intersects the central axis below the crucible. In another embodiment, the first plane intersects the central axis above the crucible.
Public/Granted literature
Information query
IPC分类: