Invention Grant
US09128125B2 Current sensing using a metal-on-passivation layer on an integrated circuit die
有权
使用集成电路裸片上的金属钝化层的电流感测
- Patent Title: Current sensing using a metal-on-passivation layer on an integrated circuit die
- Patent Title (中): 使用集成电路裸片上的金属钝化层的电流感测
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Application No.: US13523787Application Date: 2012-06-14
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Publication No.: US09128125B2Publication Date: 2015-09-08
- Inventor: Cameron Jackson
- Applicant: Cameron Jackson
- Applicant Address: US CA San Jose
- Assignee: Micrel, Inc.
- Current Assignee: Micrel, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; G01R19/00 ; H01L49/02 ; G01R1/20 ; G01R31/28

Abstract:
A current sense resistor integrated with an integrated circuit die where the integrated circuit die is housed in a flip-chip semiconductor package includes a metal layer formed over a passivation layer of the integrated circuit die where the metal layer having an array of metal pillars extending therefrom. The metal pillars are electrically connected to a first leadframe portion and a second leadframe portion of the semiconductor package where the first leadframe portion and the second leadframe portion are electrically isolated from each other and physically separated by a separation of a first distance. The current sense resistor is formed in a portion of the metal layer spanning the separation between the first and second leadframe portions, the first and second leadframe portions forming terminals of the current sense resistor.
Public/Granted literature
- US20130334662A1 Current Sensing Using a Metal-on-Passivation Layer on an Integrated Circuit Die Public/Granted day:2013-12-19
Information query
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