Invention Grant
- Patent Title: Magnatoresistive sensing device and method for fabricating the same
- Patent Title (中): 磁阻电阻感测装置及其制造方法
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Application No.: US13714734Application Date: 2012-12-14
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Publication No.: US09128141B2Publication Date: 2015-09-08
- Inventor: Fu-Tai Liou , Nai-Chung Fu
- Applicant: Voltafield Technology Corp.
- Applicant Address: TW Zhubei
- Assignee: Voltafield Technology Corp.
- Current Assignee: Voltafield Technology Corp.
- Current Assignee Address: TW Zhubei
- Agent Alan D. Kamrath
- Priority: TW101138834A 20121019
- Main IPC: G01R33/09
- IPC: G01R33/09 ; G01R33/07
Abstract:
A magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element, a circuitry element and a shielding unit. The magnetoresistive sensing element, the circuitry element and the shielding unit are disposed at the same side of the substrate. The shielding unit is between the magnetoresistive sensing element and the circuitry element. The shielding unit comprises at least one magnetic material.
Public/Granted literature
- US20140111194A1 Magnatoresistive Sensing Device and Method for Fabricating the Same Public/Granted day:2014-04-24
Information query
