Invention Grant
US09128143B2 Semiconductor device failure analysis system and semiconductor memory device
有权
半导体器件故障分析系统和半导体存储器件
- Patent Title: Semiconductor device failure analysis system and semiconductor memory device
- Patent Title (中): 半导体器件故障分析系统和半导体存储器件
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Application No.: US13827650Application Date: 2013-03-14
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Publication No.: US09128143B2Publication Date: 2015-09-08
- Inventor: Mami Kodama , Yoshikazu Iizuka
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-179561 20120813
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G01R31/26 ; G06F11/10 ; G11C29/00 ; G11C29/56

Abstract:
A semiconductor device failure analysis system according to an embodiment of the present invention includes a memory configured to be capable of retaining an initial display information; and a control unit configured to generate a first image based on a configuration information of the semiconductor device and a plurality of fail bit information of the semiconductor device, the semiconductor device including a three-dimensional memory cell array, and to generate a second image from the first image based on the initial display information, the second image corresponding to part of the plurality of fail bit information. The semiconductor device failure analysis system according to the embodiment further includes a display configured to be capable of initially displaying the second image.
Public/Granted literature
- US20140043360A1 SEMICONDUCTOR DEVICE FAILURE ANALYSIS SYSTEM AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2014-02-13
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