Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13422561Application Date: 2012-03-16
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Publication No.: US09128146B2Publication Date: 2015-09-08
- Inventor: Toshiyuki Yamagishi
- Applicant: Toshiyuki Yamagishi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-267942 20111207
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R31/28 ; G01R31/317

Abstract:
According to one embodiment, there is provided a semiconductor integrated circuit including an on-chip measurement circuit. The measurement circuit includes a buffer line, a ring oscillator, a first measurement unit measuring a duty cycle of a periodic pulse output from the buffer line, and a second measurement unit measuring a frequency of a periodic pulse output from the ring oscillator. The buffer line including a plurality of delay elements connected in series. Each of the plurality of delay elements includes a former-stage inverter unit including a PMOS transistor and an NMOS transistor and having a first delay amount, and a latter-stage inverter unit including a PMOS transistor and an NMOS transistor and having a second delay amount different from the first delay amount.
Public/Granted literature
- US20130147501A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2013-06-13
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