Invention Grant
- Patent Title: Method of forming a pattern
- Patent Title (中): 形成图案的方法
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Application No.: US13673729Application Date: 2012-11-09
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Publication No.: US09128384B2Publication Date: 2015-09-08
- Inventor: Yu Chao Lin , Chia-Hao Hsu , Kuo-Yu Wu , Chia-Jen Chen , Chao-Cheng Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/312 ; G03F7/40 ; G03F7/00 ; G03F7/075 ; G03F7/09 ; G03F7/095 ; H01L21/033 ; H01L21/3213

Abstract:
An embodiment of a method of forming a substrate pattern including forming a bottom layer and an overlying middle layer on the substrate. A photo resist pattern is formed on the middle layer. An etch coating layer is deposited on the photo resist pattern. The etch coating layer and the photo resist pattern are used as a masking element to pattern at least one of the middle layer and the bottom layer. The substrate is etched to form the substrate pattern using the at least one of the patterned middle layer and the patterned bottom layer as a masking element. The substrate pattern may be used as an element of an overlay measurement process.
Public/Granted literature
- US20140134759A1 METHOD OF FORMING A PATTERN Public/Granted day:2014-05-15
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