Invention Grant
- Patent Title: Analog switch for RF front end
- Patent Title (中): RF前端模拟开关
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Application No.: US13961852Application Date: 2013-08-07
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Publication No.: US09128502B2Publication Date: 2015-09-08
- Inventor: James Francis Imbornone , Xinwei Wang , Zhenying Luo , Xiangdong Zhang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H03K17/687
- IPC: H03K17/687 ; G05F1/46 ; H03K17/06

Abstract:
Techniques for improving the linearity of radio-frequency (RF) front-end switches. In an aspect, open-loop techniques are disclosed for superimposing the output voltage of one or more negative rectifiers on a negative substrate bias voltage to reduce the non-linearities associated with voltage-dependent substrate leakage current. In another aspect, closed-loop techniques are further disclosed for maintaining the substrate bias voltage close to a reference voltage. Exemplary embodiments of the circuit blocks are further described.
Public/Granted literature
- US20150042399A1 ANALOG SWITCH FOR RF FRONT END Public/Granted day:2015-02-12
Information query
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