Invention Grant
US09128633B2 Semiconductor memory device and method of operating the semiconductor memory device
有权
半导体存储器件和操作半导体存储器件的方法
- Patent Title: Semiconductor memory device and method of operating the semiconductor memory device
- Patent Title (中): 半导体存储器件和操作半导体存储器件的方法
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Application No.: US14019807Application Date: 2013-09-06
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Publication No.: US09128633B2Publication Date: 2015-09-08
- Inventor: Eui Cheol Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0109895 20081106
- Main IPC: G06F3/00
- IPC: G06F3/00 ; G06F3/06 ; G06F13/42

Abstract:
A method of operating a semiconductor memory device includes receiving a timeout index signal corresponding to a master of the first master group based on a residual capacity of a data buffer of the first master, setting a first timeout value in response to the timeout index signal, and changing an execution order of commands stored in a queue of the semiconductor memory device based on a result of counting the first timeout value and counting a second timeout value corresponding to a master of the second master group.
Public/Granted literature
- US20140006648A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2014-01-02
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