Invention Grant
- Patent Title: Hybrid memory device
- Patent Title (中): 混合存储设备
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Application No.: US13928694Application Date: 2013-06-27
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Publication No.: US09129674B2Publication Date: 2015-09-08
- Inventor: Raj K. Ramanujan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group LLC
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G06F12/00

Abstract:
Memory devices, controllers, and electronic devices comprising memory devices are described. In one embodiment, a memory device comprises a volatile memory, a nonvolatile memory, and a controller comprising a memory buffer, and logic to transfer data between the nonvolatile memory and the volatile memory via the memory buffer in response to requests from an application, wherein data in the memory buffer is accessible to the application. Other embodiments are also disclosed and claimed.
Public/Granted literature
- US20150003175A1 HYBRID MEMORY DEVICE Public/Granted day:2015-01-01
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