Invention Grant
US09129691B2 Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MeRAM)
有权
电压控制磁各向异性（VCMA）开关和磁电存储器（MeRAM）
- Patent Title: Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MeRAM)
- Patent Title (中): 电压控制磁各向异性（VCMA）开关和磁电存储器（MeRAM）
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Application No.: US14082118Application Date: 2013-11-16
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Publication No.: US09129691B2Publication Date: 2015-09-08
- Inventor: Pedram Khalili Amiri , Kang L. Wang , Kosmas Galatsis
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agent John P. O'Banion
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/02
Abstract:
Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.
Public/Granted literature
- US20140177327A1 VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY (VCMA) SWITCH AND MAGNETO-ELECTRIC MEMORY (MERAM) Public/Granted day:2014-06-26
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