Invention Grant
US09129709B2 Memory system comprising non-volatile memory device and related method of operation
有权
包括非易失性存储器件的存储器系统和相关的操作方法
- Patent Title: Memory system comprising non-volatile memory device and related method of operation
- Patent Title (中): 包括非易失性存储器件的存储器系统和相关的操作方法
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Application No.: US13547441Application Date: 2012-07-12
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Publication No.: US09129709B2Publication Date: 2015-09-08
- Inventor: Dong-Hun Kwak
- Applicant: Dong-Hun Kwak
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0101037 20111005
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C11/56 ; G11C16/34 ; G11C16/06 ; G11C16/26 ; G11C16/10 ; G11C16/04
Abstract:
A nonvolatile memory device includes a first memory region and a second memory region. The nonvolatile memory device is programmed by storing program data in the first memory region, performing coarse programming and fine programming to store the program data in the second memory region, and in response to a read request, accessing the program data from the first memory region or the second memory region according to a fine program flag indicating whether the coarse programming has been completed.
Public/Granted literature
- US20130088928A1 MEMORY SYSTEM COMPRISING NON-VOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION Public/Granted day:2013-04-11
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