Invention Grant
- Patent Title: Methods of forming semiconductor structures comprising aluminum oxide
- Patent Title (中): 形成包含氧化铝的半导体结构的方法
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Application No.: US14184452Application Date: 2014-02-19
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Publication No.: US09129798B1Publication Date: 2015-09-08
- Inventor: Difeng Zhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3213 ; H01L21/033 ; H01L29/51 ; H01L21/28
Abstract:
A semiconductor structure comprising aluminum oxide. The semiconductor structure comprises a dielectric material overlying a substrate. The aluminum oxide overlies the dielectric material in a first region of the structure. A second region of the structure includes a first titanium nitride portion overlying the dielectric material, magnesium over the first titanium nitride portion, and a second titanium nitride portion over the magnesium. Methods of forming the semiconductor structure including aluminum oxide are also disclosed.
Public/Granted literature
- US20150235841A1 METHODS OF FORMING SEMICONDUCTOR STRUCTURES COMPRISING ALUMINUM OXIDE Public/Granted day:2015-08-20
Information query
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