Invention Grant
US09129845B2 Buried low-resistance metal word lines for cross-point variable-resistance material memories
有权
埋置低电阻金属字线用于交叉点可变电阻材料存储器
- Patent Title: Buried low-resistance metal word lines for cross-point variable-resistance material memories
- Patent Title (中): 埋置低电阻金属字线用于交叉点可变电阻材料存储器
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Application No.: US11857682Application Date: 2007-09-19
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Publication No.: US09129845B2Publication Date: 2015-09-08
- Inventor: Jun Liu , Michael P. Violette
- Applicant: Jun Liu , Michael P. Violette
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L27/10 ; G11C13/00 ; H01L27/24
Abstract:
Variable-resistance material memories include a buried salicide word line disposed below a diode. Variable-resistance material memories include a metal spacer spaced apart and next to the diode. Processes include the formation of one of the buried salicide word line and the metal spacer. Devices include the variable-resistance material memories and one of the buried salicided word line and the spacer word line.
Public/Granted literature
- US20090072341A1 BURIED LOW-RESISTANCE METAL WORD LINES FOR CROSS-POINT VARIABLE-RESISTANCE MATERIAL MEMORIES Public/Granted day:2009-03-19
Information query
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