Invention Grant
- Patent Title: Stacked capacitor structure and a fabricating method for fabricating the same
- Patent Title (中): 叠层电容器结构及其制造方法
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Application No.: US14026117Application Date: 2013-09-13
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Publication No.: US09129849B2Publication Date: 2015-09-08
- Inventor: Tzung-Han Lee
- Applicant: INOTERA MEMORIES, INC.
- Applicant Address: TW Taoyuan County
- Assignee: Inotera Memories, Inc.
- Current Assignee: Inotera Memories, Inc.
- Current Assignee Address: TW Taoyuan County
- Agency: Rosenberg, Klein & Lee
- Priority: TW102114139A 20130422
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/20 ; H01L49/02

Abstract:
A stacked capacitor structure of the instant disclosure comprises a substrate and a plurality of stacked capacitors. The substrate has an insulating layer formed thereon and a plurality of contact plugs in the insulating layer, wherein the contact plugs are exposed on the upper surface of the insulating layer. Specially, each of the stacked capacitors comprises a lower electrode, a dielectric layer, and an upper electrode. The lower electrode is arranged on one of the contact plugs and has a columnar base portion and a crown shaped upper portion. The dielectric layer is arranged on the lower electrode and covers the outer surface of the lower electrode. The upper electrode is arranged above the lower electrode, wherein the dielectric layer is intermediately between the upper electrode and the lower electrode.
Public/Granted literature
- US20140312460A1 STACKED CAPACITOR STRUCTURE AND A FABRICATING METHOD FOR FABRICATING THE SAME Public/Granted day:2014-10-23
Information query
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