Invention Grant
- Patent Title: Semiconductor device manufacturing method
- Patent Title (中): 半导体器件制造方法
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Application No.: US14539152Application Date: 2014-11-12
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Publication No.: US09129850B2Publication Date: 2015-09-08
- Inventor: Hiroyuki Ode
- Applicant: PS4 LUXCO S.A.R.L.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2011-267690 20111207
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L27/108 ; H01L21/768 ; H01L27/02
Abstract:
A semiconductor device comprises a conductor film and a capacitor comprising a lower electrode provided on the conductor film. The conductor film includes a first conductive film containing a first metal, a second conductive film containing a second metal on the first conductive film, and an oxide film of the second metal on the second conductive film. The oxide film of the second metal has a lower electric resistivity than an oxide film of the first metal.
Public/Granted literature
- US20150072501A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2015-03-12
Information query
IPC分类:
