Full metal gate replacement process for NAND flash memory

Invention Grant

US09129854B2 Full metal gate replacement process for NAND flash memory 有权

Title translation: NAND闪存全金属栅极更换工艺

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Patent Title: Full metal gate replacement process for NAND flash memory
Patent Title (中): NAND闪存全金属栅极更换工艺
Application No.: US13645115

Application Date: 2012-10-04
Publication No.: US09129854B2

Publication Date: 2015-09-08
Inventor: Kazuya Tokunaga , Jongsun Sel , Marika Gunji-Yoneoka , Tuan Pham
Applicant: SanDisk Technologies Inc.
Applicant Address: US TX Plano
Assignee: SanDisk Technologies Inc.
Current Assignee: SanDisk Technologies Inc.
Current Assignee Address: US TX Plano
Agency: Davis Wright Tremaine LLP
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L27/115 ; H01L21/28 ; H01L29/66

Full metal gate replacement process for NAND flash memory

Abstract:

A NAND flash memory chip is made by forming sacrificial control gate structures and sacrificial select structures, and subsequently replacing these sacrificial structures with metal. Filler structures are formed between sacrificial control gate structures and are subsequently removed to form air gaps between neighboring control gate lines and between floating gates.

Abstract(Chinese):

NAND闪存芯片通过形成牺牲控制栅极结构和牺牲选择结构，并随后用金属代替这些牺牲结构来制造。填料结构形成在牺牲控制栅结构之间，随后被去除以在相邻的控制栅极线之间和浮置栅之间形成气隙。

Public/Granted literature

US20140097482A1 Full Metal Gate Replacement Process for NAND Flash Memory Public/Granted day:2014-04-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS