Invention Grant
US09129881B2 Solid-state imaging device with charge holding section between trenched transfer gate sections, manufacturing method of same, and electronic apparatus
有权
具有沟槽转移栅极部分之间的电荷保持部分的固态成像装置，其制造方法和电子装置
- Patent Title: Solid-state imaging device with charge holding section between trenched transfer gate sections, manufacturing method of same, and electronic apparatus
- Patent Title (中): 具有沟槽转移栅极部分之间的电荷保持部分的固态成像装置，其制造方法和电子装置
-
Application No.: US14331742Application Date: 2014-07-15
-
Publication No.: US09129881B2Publication Date: 2015-09-08
- Inventor: Takahiro Kawamura
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Fishman Stewart Yamaguchi PLLC
- Priority: JP2013-185945 20130909
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L27/146
Abstract:
A solid-state imaging device includes a pixel having a photoelectric conversion element which generates a charge in response to incident light, a first transfer gate which transfers the charge from the photoelectric conversion element to a charge holding section, and a second transfer gate which transfers the charge from the charge holding section to a floating diffusion. The first transfer gate includes a trench gate structure having at least two trench gate sections embedded in a depth direction of a semiconductor substrate, and the charge holding section includes a semiconductor region positioned between adjacent trench gate sections.
Public/Granted literature
- US20150069471A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS Public/Granted day:2015-03-12
Information query
IPC分类:
