Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US13521586Application Date: 2011-01-12
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Publication No.: US09129885B2Publication Date: 2015-09-08
- Inventor: Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
- Applicant: Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-006952 20100115
- International Application: PCT/JP2011/000088 WO 20110112
- International Announcement: WO2011/086896 WO 20110721
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L25/18 ; H01L23/24 ; H01L23/31 ; H01L23/373 ; H01L25/07 ; H01L29/16 ; H01L23/00
Abstract:
A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.
Public/Granted literature
- US20120286292A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2012-11-15
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