Onium-containing CMP compositions and methods of use thereof

Invention Grant

US09129907B2 Onium-containing CMP compositions and methods of use thereof 有权

Title translation: 含鎓的CMP组合物及其使用方法

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Patent Title: Onium-containing CMP compositions and methods of use thereof
Patent Title (中): 含鎓的CMP组合物及其使用方法
Application No.: US11517909

Application Date: 2006-09-08
Publication No.: US09129907B2

Publication Date: 2015-09-08
Inventor: Michael L. White , Zhan Chen
Applicant: Michael L. White , Zhan Chen
Applicant Address: US IL Aurora
Assignee: Cabot Microelectronics Corporation
Current Assignee: Cabot Microelectronics Corporation
Current Assignee Address: US IL Aurora
Agent Thomas Omholt; Arlene Hornilla
Main IPC: H01L21/3105
IPC: H01L21/3105 ; C09G1/02

Onium-containing CMP compositions and methods of use thereof

Abstract:

The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semiconductor materials. The composition has a pH of about 5 or less and comprises colloidal silica, at least one onium compound selected from the group consisting of a phosphonium salt, a sulfonium salt, and a combination thereof, and an aqueous carrier therefor; A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.

Abstract(Chinese):

本发明提供适用于抛光半导体材料的化学机械抛光（CMP）组合物。该组合物具有约5或更低的pH，并且包含胶体二氧化硅，至少一种选自鏻盐，锍盐及其组合的鎓化合物及其水性载体; 还公开了利用该组合物来研磨半导体材料的表面的CMP方法。

Public/Granted literature

US20080060278A1 Onium-containing CMP compositions and methods of use thereof Public/Granted day:2008-03-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理