Invention Grant
- Patent Title: Wafer processing
- Patent Title (中): 晶圆处理
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Application No.: US14032203Application Date: 2013-09-20
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Publication No.: US09129910B2Publication Date: 2015-09-08
- Inventor: Guowei Zhang
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte. Ltd.
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/311 ; H01L21/302 ; H01L21/469 ; H01L21/762
Abstract:
Semiconductor device and method for forming a semiconductor device are presented. A substrate having top and bottom pad stacks is provided. Each pad stack includes at least first and second pad layers. The second pad layer of the bottom pad stack is removed by a batch process. Trench isolation regions are formed in the substrate.
Public/Granted literature
- US20150087132A1 WAFER PROCESSING Public/Granted day:2015-03-26
Information query
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