Invention Grant
- Patent Title: Boron-doped carbon-based hardmask etch processing
- Patent Title (中): 硼掺杂碳基硬掩模蚀刻加工
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Application No.: US14168350Application Date: 2014-01-30
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Publication No.: US09129911B2Publication Date: 2015-09-08
- Inventor: Kenny Linh Doan , Jong Mun Kim , Daisuke Shimizu
- Applicant: Kenny Linh Doan , Jong Mun Kim , Daisuke Shimizu
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3065 ; H01L21/3213 ; H01L21/306 ; H01L21/033 ; H01L21/308 ; H01L21/314 ; H01L21/02
Abstract:
Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH4/N2/O2 and a flourine-rich source such as, but not limited to, CF4, SF6 or C2F6.
Public/Granted literature
- US20140213059A1 BORON-DOPED CARBON-BASED HARDMASK ETCH PROCESSING Public/Granted day:2014-07-31
Information query
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