Systems and methods for annealing semiconductor structures

Invention Grant

US09129918B2 Systems and methods for annealing semiconductor structures 有权

Title translation: 半导体结构退火的系统和方法

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Patent Title: Systems and methods for annealing semiconductor structures
Patent Title (中): 半导体结构退火的系统和方法
Application No.: US14066756

Application Date: 2013-10-30
Publication No.: US09129918B2

Publication Date: 2015-09-08
Inventor: Chun-Hsiung Tsai , Zi-Wei Fang , Chao-Hsiung Wang
Applicant: Taiwan Semiconductor Manufacturing Company Limited
Applicant Address: TW Hsinchu
Assignee: Taiwan Semiconductor Manufacturing Company Limited
Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
Current Assignee Address: TW Hsinchu
Agency: Jones Day
Main IPC: H01L21/324
IPC: H01L21/324 ; H01L21/67 ; H05B6/64

Systems and methods for annealing semiconductor structures

Abstract:

Systems and methods are provided for annealing a semiconductor structure. For example, a semiconductor structure is provided. An energy-converting material capable of increasing the semiconductor structure's absorption of microwave radiation is provided. A heat reflector is provided between the energy-converting material and the semiconductor structure, the heat reflector being capable of reflecting thermal radiation from the semiconductor structure. Microwave radiation is applied to the energy-converting material and the semiconductor structure to anneal the semiconductor structure for fabricating semiconductor devices.

Abstract(Chinese):

提供了退火半导体结构的系统和方法。例如，提供半导体结构。提供能够增加半导体结构的微波辐射吸收的能量转换材料。在能量转换材料和半导体结构之间提供热反射器，该热反射器能够反射来自半导体结构的热辐射。微波辐射被施加到能量转换材料和半导体结构上以退火用于制造半导体器件的半导体结构。

Public/Granted literature

US20150118866A1 SYSTEMS AND METHODS FOR ANNEALING SEMICONDUCTOR STRUCTURES Public/Granted day:2015-04-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/324	.....用于改善半导体材料性能的热处理，例如退火、烧结（H01L21/20至H01L21/288，H01L21/302至H01L21/322优先）