Invention Grant
- Patent Title: Power transistor with heat dissipation and method therefore
- Patent Title (中): 功率晶体管具有散热和方法
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Application No.: US14331724Application Date: 2014-07-15
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Publication No.: US09129930B2Publication Date: 2015-09-08
- Inventor: Min Ding
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/36 ; H01L23/42 ; H01L23/433 ; H01L23/495 ; H01L23/367
Abstract:
A device comprising a substrate, an integrated circuit (IC) die attached to the substrate on one side, a plurality of contact pads on an active side of the IC die, a plurality of thermally and electrically conductive legs, each of the legs attached to a respective one of the contact pads, and an encapsulating material formed around the substrate, the IC die, and a portion of the legs. A contact end of each of the legs is exposed, and one of the contact ends conducts a signal from a transistor in the IC die.
Public/Granted literature
- US20140327124A1 POWER TRANSISTOR WITH HEAT DISSIPATION AND METHOD THEREFORE Public/Granted day:2014-11-06
Information query
IPC分类:
