Invention Grant
- Patent Title: Semiconductor module
- Patent Title (中): 半导体模块
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Application No.: US14129262Application Date: 2012-06-27
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Publication No.: US09129932B2Publication Date: 2015-09-08
- Inventor: Kenji Hayashi , Masashi Hayashiguchi
- Applicant: Kenji Hayashi , Masashi Hayashiguchi
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2011-142036 20110627; JP2012-033142 20120217
- International Application: PCT/JP2012/066358 WO 20120627
- International Announcement: WO2013/002249 WO 20130301
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L23/34 ; H01L23/367 ; H01L25/18 ; H01L25/07 ; H01L23/24 ; H01L23/373 ; H01L23/40 ; H01L23/36 ; H01L23/00

Abstract:
A semiconductor module includes an insulating substrate (200) that is made of AlN and that has a first plane (201) and a second plane (202) both of which face mutually opposite directions, a first conductor layer (210) formed on the first plane (201), a second conductor layer (220) formed on the second plane (202), a semiconductor device (300) bonded to the first conductor layer (210) with a first solder layer (510) interposed therebetween, and a heat dissipation plate (400) that is formed in a rectangular shape when viewed planarly and that is bonded to the second conductor layer (220) with a second solder layer (520) interposed therebetween, and, in this semiconductor module, the heat dissipation plate (400) is deformed so as to become convex in a direction in which the second plane (202) is pointed when viewed from a width direction thereof.
Public/Granted literature
- US20140124915A1 SEMICONDUCTOR MODULE Public/Granted day:2014-05-08
Information query
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