Invention Grant
- Patent Title: Devices, components and methods combining trench field plates with immobile electrostatic charge
- Patent Title (中): 将沟槽场板与固定静电荷组合的器件，组件和方法
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Application No.: US13975421Application Date: 2013-08-26
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Publication No.: US09129936B2Publication Date: 2015-09-08
- Inventor: Mohamed N. Darwish , Jun Zeng
- Applicant: MaxPower Semiconductor, Inc.
- Applicant Address: US CA San Jose
- Assignee: MaxPower Semiconductor, Inc.
- Current Assignee: MaxPower Semiconductor, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Groover & Associates PLLC
- Agent Gwendolyn S. S. Groover; Robert O. Groover, III
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/40 ; H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/423
Abstract:
N-channel power semiconductor devices in which an insulated field plate is coupled to the drift region, and immobile electrostatic charge is also present at the interface between the drift region and the insulation around the field plate. The electrostatic charge permits OFF-state voltage drop to occur near the source region, in addition to the voltage drop which occurs near the drain region (due to the presence of the field plate).
Public/Granted literature
- US20140054686A1 DEVICES, COMPONENTS AND METHODS COMBINING TRENCH FIELD PLATES WITH IMMOBILE ELECTROSTATIC CHARGE Public/Granted day:2014-02-27
Information query
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