Invention Grant
- Patent Title: SiC semiconductor device and method for manufacturing the same
- Patent Title (中): SiC半导体器件及其制造方法
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Application No.: US14078833Application Date: 2013-11-13
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Publication No.: US09129939B2Publication Date: 2015-09-08
- Inventor: Fumikazu Imai
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2011-120124 20110530
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/0312 ; H01L29/45 ; H01L21/04 ; H01L21/283 ; H01L29/66 ; H01L29/872 ; H01L29/06 ; H01L29/16

Abstract:
In some aspects of the invention, a layer containing titanium and nickel is formed on an SiC substrate. A nickel silicide layer containing titanium carbide can be formed by heating. A carbon layer precipitated is removed by reverse sputtering. Thus, separation of an electrode of a metal layer formed on nickel silicide in a subsequent step is suppressed. The effect of preventing the separation can be further improved when the relation between the amount of precipitated carbon and the amount of carbon in titanium carbide in the surface of nickel silicide from which the carbon layer has not yet been removed satisfies a predetermined condition.
Public/Granted literature
- US20140061674A1 SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-03-06
Information query
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