Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14331289Application Date: 2014-07-15
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Publication No.: US09129946B2Publication Date: 2015-09-08
- Inventor: Yukihiro Satou , Toshiyuki Hata
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: Stites & Harbison, PLLC.
- Agent Nicholas Trenkle
- Priority: JP2003-187377 20030630
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/00 ; H01L23/495 ; H01L23/31

Abstract:
A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.
Public/Granted literature
- US09165901B2 Semiconductor device Public/Granted day:2015-10-20
Information query
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