Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US13881654Application Date: 2011-02-09
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Publication No.: US09129949B2Publication Date: 2015-09-08
- Inventor: Shinsuke Asada , Kenjiro Nagao , Dai Nakajima , Yuetsu Watanabe , Yoshihito Asao , Takuya Oga , Masaki Kato
- Applicant: Shinsuke Asada , Kenjiro Nagao , Dai Nakajima , Yuetsu Watanabe , Yoshihito Asao , Takuya Oga , Masaki Kato
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Agent Richard C. Turner
- International Application: PCT/JP2011/052742 WO 20110209
- International Announcement: WO2012/108011 WO 20120816
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/12 ; H01L23/00 ; H01L23/36 ; H01L23/31

Abstract:
A power semiconductor module (100) includes: an electrode plate (2) in which a body portion (2a) and an external connection terminal portion (2b) are integrally formed, and the body portion (2a) is arranged on the same flat surface; a semiconductor chip (1) mounted on one surface (mounting surface) (2c) of the body portion (2a); and a resin package (3) in which the other surface (heat dissipation surface) (2d) of the body portion (2a) is exposed, and the body portion (2a) of the electrode plate (2) and the semiconductor chip (1) are sealed with resin. The heat dissipation surface (2d) is the same surface as the bottom (3a) of the resin package (3); and consequently, heat dissipation properties and reliability are improved and a reduction in size can be achieved.
Public/Granted literature
- US20130221516A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2013-08-29
Information query
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