Invention Grant
- Patent Title: Gallium lathanide oxide films
- Patent Title (中): 柠檬酸铅氧化膜
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Application No.: US13175551Application Date: 2011-07-01
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Publication No.: US09129961B2Publication Date: 2015-09-08
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/02 ; H01L21/314 ; C23C16/40 ; C23C16/455 ; H01L21/28 ; H01L21/316 ; H01L49/02 ; H01L29/10 ; H01L29/788 ; H01L21/8238
Abstract:
Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be structured as one or more monolayers. The gallium lanthanide oxide film may be formed using atomic layer deposition.
Public/Granted literature
- US20110260215A1 GALLIUM LATHANIDE OXIDE FILMS Public/Granted day:2011-10-27
Information query
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