Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14052064Application Date: 2013-10-11
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Publication No.: US09129966B2Publication Date: 2015-09-08
- Inventor: Kenji Nagasaki
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2009-044037 20090226
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/528 ; H01L23/31 ; H01L23/525 ; H01L23/532
Abstract:
One wiring width of upper and lower wiring paths formed facing each other sandwiching an interlayer insulating film is large, and another wiring width is small; and the wiring widths of mutually adjacent wiring paths are formed to be large and small in alternating fashion on the same wiring layer.
Public/Granted literature
- US20140042635A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-02-13
Information query
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