Invention Grant
- Patent Title: Methods for the production of microelectronic packages having radiofrequency stand-off layers
- Patent Title (中): 用于生产具有射频隔离层的微电子封装的方法
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Application No.: US14090975Application Date: 2013-11-26
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Publication No.: US09129981B2Publication Date: 2015-09-08
- Inventor: Weng F. Yap , Eduard J. Pabst
- Applicant: Weng F. Yap , Eduard J. Pabst
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR INC.
- Current Assignee: FREESCALE SEMICONDUCTOR INC.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/66 ; H01L21/768 ; H01L23/538 ; H01L23/498

Abstract:
Microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the method includes producing a plurality of vertically-elongated contacts in ohmic contact with interconnect lines contained within one or more redistribution layers built over the frontside of a semiconductor die. A molded radiofrequency (RF) separation or stand-off layer is formed over the redistribution layers through which the plurality of vertically-elongated contacts extend. An antenna structure is fabricated or otherwise provided over the molded RF stand-off layer and electrically coupled to the semiconductor die through at least one of the plurality of vertically-elongated contacts.
Public/Granted literature
- US20150145108A1 MICROELECTRONIC PACKAGES HAVING RADIOFREQUENCY STAND-OFF LAYERS AND METHODS FOR THE PRODUCTION THEREOF Public/Granted day:2015-05-28
Information query
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