Invention Grant
- Patent Title: Semiconductor memory device and method for manufacturing the same
- Patent Title (中): 半导体存储器件及其制造方法
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Application No.: US14107492Application Date: 2013-12-16
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Publication No.: US09129995B2Publication Date: 2015-09-08
- Inventor: Kazuaki Nakajima , Atsushi Murakoshi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L27/115 ; H01L29/788
Abstract:
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a silicon film provided on the first insulating film, a metal silicide film provided on the silicon film, a second insulating film provided on the metal silicide film, and an electrode provided on the second insulating film.
Public/Granted literature
- US20150054047A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-02-26
Information query
IPC分类:
