Invention Grant
- Patent Title: Robust ESD protection with silicon-controlled rectifier
- Patent Title (中): 具有可控硅整流器的强大的ESD保护
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Application No.: US13778369Application Date: 2013-02-27
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Publication No.: US09130008B2Publication Date: 2015-09-08
- Inventor: Chun-Yu Lin , Ming-Dou Ker , Ming Hsien Tsai , Li-Wei Chu , Ming-Hsiang Song
- Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/74 ; H01L29/10

Abstract:
Some embodiments relate to a silicon controlled rectifier (SCR) that includes a current path which couples an SCR anode to an SCR cathode. The current path includes a first vertical current path component coupled to the SCR anode, and a second vertical current path component coupled to the SCR cathode. A horizontal current path component includes a first well region and a second well region that meet at a junction lying along a first plane. The first and second well regions cooperatively span a distance between the first and second vertical current path components. The first and second vertical current path components mirror one another symmetrically about the first plane.
Public/Granted literature
- US20150228770A1 Robust ESD Protection with Silicon-Controlled Rectifier Public/Granted day:2015-08-13
Information query
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