Invention Grant
- Patent Title: Wafer processing method
- Patent Title (中): 晶圆加工方法
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Application No.: US14260781Application Date: 2014-04-24
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Publication No.: US09130031B2Publication Date: 2015-09-08
- Inventor: Tomohiro Endo
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: JP2013-091279 20130424
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/78 ; B23K26/40 ; H01L33/00

Abstract:
A wafer processing method including a modified layer forming step of applying a laser beam having a transmission wavelength to a substrate from the back side of the substrate along division lines. The modified layer forming step includes the steps of making the polarization plane of linearly polarized light of the laser beam parallel to the direction perpendicular to each division line, shifting the beam center of the laser beam from the optical axis of a focusing lens of a focusing unit for focusing the laser beam, in the direction perpendicular to each division line, and shifting the focal point of the laser beam by the focusing lens in the same direction as the direction where the beam center of the laser beam has been shifted.
Public/Granted literature
- US20140322847A1 WAFER PROCESSING METHOD Public/Granted day:2014-10-30
Information query
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