Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14408954Application Date: 2013-12-06
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Publication No.: US09130036B2Publication Date: 2015-09-08
- Inventor: Tsutomu Kiyosawa , Kazuhiro Kagawa , Yasuyuki Yanase , Haruyuki Sorada
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-095663 20130430
- International Application: PCT/JP2013/007196 WO 20131206
- International Announcement: WO2014/178094 WO 20141106
- Main IPC: H01L21/34
- IPC: H01L21/34 ; H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/739 ; H01L29/04 ; H01L29/16 ; H01L21/324 ; H01L21/302 ; H01L21/3065 ; H01L21/04 ; H01L21/28 ; H01L21/311 ; H01L21/687 ; H01J37/32
Abstract:
A semiconductor device includes: a substrate with an off-angle; an SiC layer provided on a principal surface of the substrate, including an n type drift region, and having a trench whose bottom is located in the drift region; and a gate electrode provided in the trench in the SiC layer. In the trench in the SiC layer, a first angle formed by at least part of a first sidewall on an off-direction side and the principal surface of the substrate is an obtuse angle, and a second angle formed by at least part of a second sidewall opposite to the first sidewall and the principal surface of the substrate is an acute angle, in a cross section parallel to a direction of a normal line to the principal surface of the substrate and a direction of a c-axis of the substrate.
Public/Granted literature
- US20150137221A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2015-05-21
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