Invention Grant
- Patent Title: Thin film transistor and method for fabricating the same
- Patent Title (中): 薄膜晶体管及其制造方法
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Application No.: US14104073Application Date: 2013-12-12
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Publication No.: US09130042B2Publication Date: 2015-09-08
- Inventor: Bok-Young Lee
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2013-0008715 20130125
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L29/66
Abstract:
Disclosed is a thin film transistor and a method of fabricating the same which includes a light-shielding layer made of the same material as a semiconductor layer on a substrate, wherein the light-shielding layer absorbs light incident upon the semiconductor layer, thereby preventing deterioration in characteristics of the thin film transistor caused by exterior light.
Public/Granted literature
- US20140209894A1 THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-07-31
Information query
IPC分类:
