Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12893513Application Date: 2010-09-29
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Publication No.: US09130043B2Publication Date: 2015-09-08
- Inventor: Kengo Akimoto
- Applicant: Kengo Akimoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-229323 20091001
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12
Abstract:
An object is to provide a method for manufacturing a highly reliable semiconductor device which includes a thin film transistor using an oxide semiconductor and having stable electric characteristics. In manufacture of a semiconductor device in which an oxide semiconductor is used for a channel formation region, after an oxide semiconductor film is formed, a conductive film including a metal, a metal compound, or an alloy that can absorb or adsorb moisture, a hydroxy group, or hydrogen is formed to overlap with the oxide semiconductor film with an insulating film provided therebetween. Then, heat treatment is performed in the state where the conductive film is exposed; in such a manner, activation treatment for removing moisture, oxygen, hydrogen, or the like adsorbed onto a surface of or in the conductive film is performed.
Public/Granted literature
- US20110079777A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-04-07
Information query
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