Invention Grant
- Patent Title: Light emitting devices having dislocation density maintaining buffer layers
- Patent Title (中): 具有位错密度维持缓冲层的发光器件
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Application No.: US14158401Application Date: 2014-01-17
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Publication No.: US09130068B2Publication Date: 2015-09-08
- Inventor: Long Yang , Will Fenwick
- Applicant: Manutius IP, Inc.
- Applicant Address: US CA Los Altos
- Assignee: Manutius IP, Inc.
- Current Assignee: Manutius IP, Inc.
- Current Assignee Address: US CA Los Altos
- Agency: Norton Rose Fulbright US LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/12 ; H01L21/02 ; H01L33/02
Abstract:
A method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and a gallium nitride layer adjacent to the aluminum gallium nitride layer. During the formation of each of the plurality of layers, one or more process parameters are selected such that an individual layer of the plurality of layers is strained.
Public/Granted literature
- US20140134775A1 LIGHT EMITTING DEVICES HAVING DISLOCATION DENSITY MAINTAINING BUFFER LAYERS Public/Granted day:2014-05-15
Information query
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