Invention Grant
- Patent Title: Structure of dielectric grid with a metal pillar for semiconductor device
- Patent Title (中): 具有半导体器件金属柱的电介质栅结构
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Application No.: US13968260Application Date: 2013-08-15
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Publication No.: US09130077B2Publication Date: 2015-09-08
- Inventor: Ssu-Chiang Weng , Kuo-Cheng Lee , Chi-Cherng Jeng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/18

Abstract:
An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a substrate, sensor elements disposed at a front surface of the substrate, and a dielectric grid disposed over a back surface of the substrate. The dielectric grid includes a first dielectric layer as a bottom portion, a metal pillar, as a core portion of a upper portion, disposed over the first dielectric layer and a second dielectric layer wrapping around the metal pillar. The image sensor device also includes a stack of layers disposed over the back surface of the substrate. Refractive index of each layers increases from top layer to bottom layer. The image sensor device also includes a color filter and a microlens disposed over the back surface of the substrate.
Public/Granted literature
- US20150048467A1 Structure of Dielectric Grid with a Metal Pillar for Semiconductor Device Public/Granted day:2015-02-19
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